Germanium on glass and glass-ceramic structures
AssigneeCorning Incorporated
InventorsKishor Gadkaree, Paul Danielson, Matthew Dejneka, Josef Lapp, Linda Pinckney
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Abstract
A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.
Claims13
A semiconductor-on-insulator structure comprising first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein
- the first layer comprises a substantially single crystal semiconductor material comprising germanium;
- the second layer comprises a glass or a glass-ceramic having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.
Dependencies are inferred from the claim text.