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US 2007/0166938 A1Published application
Semiconductor device with high conductivity region using shallow trench
AssigneeAdvanced Micro Devices, Inc.
InventorsJeffrey Erhardt, Kashmir Sahota, Emmanuil Lingunis, Nga-Ching Wong
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Abstract
A structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in the opening. A structure is over the doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.
Claims14
An integrated circuit comprising:
- a semiconductor substrate having an opening provided therein;
- a first doped high conductivity region formed from doped material in the opening, the opening containing only the doped material, and a diffused dopant region proximate the doped material in the opening;
- and
- a structure over the first doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.
1 more element
An integrated circuit comprising:
- a silicon substrate having shallow trenches provided therein;
- doped high conductivity regions of doped polysilicon material in the shallow trenches, the shallow trenches containing only the doped polysilicon material, the doped polysilicon material planar with the silicon substrate and diffused dopant regions around the doped polysilicon material in the shallow trenches;
- a first oxide insulating layer over the silicon substrate and the doped polysilicon material;
- structures over the first oxide insulating layer, the structures selected from a group consisting of wordlines, gates, dielectric layers, and a combination thereof;
- and
- completing the integrated circuit.
3 more elements
Dependencies are inferred from the claim text.