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US 2007/0166932 A1Published application
Semiconductor device and method for fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorDae Kim
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Abstract
A method of fabricating a semiconductor device consistent with the present invention, the method comprising: forming an insulation film on a substrate; forming a mono-atomic layer of barrier ions at the insulation film; forming a gate insulation film in which the barrier ions are stabilized by an annealing process; forming a gate electrode on the gate insulation film; forming a spacer at a side surface of the gate electrode; and forming source/drain impurity regions at a side surface of the gate electrode.
Claims9
A semiconductor device comprising:
- a substrate;
- a gate insulating layer including an oxide layer formed on the substrate and nitride ions formed at a surface of the oxide layer;
- a gate electrode formed on the gate insulating layer;
- a spacer formed at a sidewall of the gate electrode;
- and
- source/drain impurity regions formed at a side of the gate electrode.
3 more elements
A method of fabricating a semiconductor device, comprising:
- forming an insulating layer on a substrate;
- forming a mono-atomic layer of barrier ions at the insulating layer;
- forming a gate insulating layer in which the barrier ions are stabilized by an annealing process;
- forming a gate electrode on the gate insulating layer;
- forming a spacer at a sidewall of the gate electrode;
- and
- forming source/drain impurity regions at a side of the gate electrode.
4 more elements
Dependencies are inferred from the claim text.