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US 2007/0166931 A1Published application
Methods of Manufacturing A Semiconductor Device for Improving the Electrical Characteristics of A Dielectric Film
OwnerHong-Bae Park, Hag-Ju Cho +2inventors
InventorsHong-Bae Park, Hag-Ju Cho, Yu-Gyun Shin, Sang-Bom Kang
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Abstract
A method of manufacturing a semiconductor device includes depositing a high-dielectric film on a semiconductor substrate and performing an oxygen plasma treatment on the high-dielectric film deposited on the semiconductor substrate. The method further includes forming an electrode on the oxygen-plasma treated high-dielectric film.
Claims22
A method of manufacturing a semiconductor device, comprising:
- depositing a high-dielectric film on a semiconductor substrate;
- performing an oxygen plasma treatment on the high-dielectric film deposited on the semiconductor substrate;
- and
- forming an electrode on the oxygen-plasma treated high-dielectric film.
1 more element
A method of manufacturing a semiconductor device, comprising:
- depositing a multi-level high-dielectric film comprising a plurality of high-dielectric layers stacked on a semiconductor substrate;
- performing an oxygen plasma treatment on the multi-level high-dielectric film deposited on the semiconductor substrate;
- and
- forming an electrode on the oxygen plasma treated multi-level high-dielectric film.
1 more element
Dependencies are inferred from the claim text.