Method of producing semiconductor wafer
AssigneeSumco Corporation
InventorsKoji Matsumoto, Tomoyuki Hora, Akihiko Endo, Etsurou Morita, Masaharu Ninomiya
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Abstract
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.
Claims9
A method of producing a semiconductor wafer comprising a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere at the step of forming the strain-relaxed SiGe layer.
Dependencies are inferred from the claim text.