US 2007/0166925 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.

Claims16

Dependent claims

A semiconductor device comprising:

a semiconductor substrate having a surface;
a trench formed in the surface of the semiconductor substrate;
a conductor embedded in the trench;
a conductive layer arranged adjacent to the trench on the surface of the semiconductor substrate;
a plurality of semiconductor elements including sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer;
a semiconductor element formation region for forming the plurality of semiconductor elements therein;
and
a planar wiring layer embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/617,517Filed 28 Dec 2006

Priority

JP 2005-37678828 Dec 2005

Published

19 Jul 2007

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 30/663
Vertical dmos [vdmos] fets: having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
H10D 30/0297
Of vertical dmos [vdmos] fets: using recessing of the gate electrodes, e.g. to form trench gate electrodes
H10D 30/664
Vertical dmos [vdmos] fets: inverted VDMOS transistors, i.e. source-down VDMOS transistors
H10D 64/256
Source or drain electrodes for field-effect devices: for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims16