Back to results
US 2007/0166923 A1Published application
Method for nitridation of the interface between a dielectric and a substrate in a MOS device
AssigneeMacronix International Co., Ltd.
InventorsYen-Hao Shih, Shih-Chin Lee
Life of this patent
Estimating the term…
Abstract
A MOSFET fabrication process comprises nitridation of the dielectric silicon interface so that silicon-dangling bonds are connected with nitrogen atoms creating silicon-nitrogen bonds, which are stronger than silicon-hydrogen bonds. A tunnel dielectric is formed on the substrate. A nitride layer is then formed over the tunnel dielectric layer. The top of the nitride layer is then converted to an oxide and the interface between the substrate and the tunnel dielectric is nitrided simultaneously with conversion of the nitride layer to oxide.
Claims17
A process for fabricating semiconductor device, comprising:
- forming a tunnel dielectric layer over a silicon substrate;
- forming a nitride layer over the tunnel dielectric layer;
- converting a top surface of the nitride into an oxide layer;
- and
- nitriding the interface between the tunnel dielectric layer and the silicon substrate at the same time when the top layer of the nitride layer is converted to an oxide layer.
2 more elements
Dependencies are inferred from the claim text.