Non-volatile memory device, and manufacturing method and programming method thereof

A method of manufacturing a non-volatile memory device, comprising:

• providing a semiconductor substrate in which a plurality of select lines and a plurality of word lines are formed;
• forming a first insulating layer over the semiconductor substrate including the select lines and the word lines;
• removing the first insulating layer between the select linesforming a interference shielding line of conductive material over the first insulating layer between the select line and a word line adjacent to the select line;
• forming a second insulating layer over the semiconductor substrate including the interference shielding line.

A non-volatile memory device, comprising:

• a cell gate including a floating gate and a control gate;
• an insulating layer formed over the cell gate;
• and
• a interference shielding line of the conductive material formed over the insulating layer.

A method of manufacturing a non-volatile memory device, the method comprising:

• forming a cell gate including a floating gate and a control gate over a semiconductor substrate;
• forming an insulating layer over the cell gate and the semiconductor substrate;
• and
• forming an interference shielding line of conductive material over the insulating layer.

A method of manufacturing a non-volatile memory device, the method comprising:

• forming first and second cell gates over a semiconductor substrate;
• forming an insulating layer over the first and second cell gates;
• and
• forming an interference shielding line of the conductive material over the insulating layer and between the first and second cell gates.