Semiconductor device and method of forming the same

Abstract

There is provided a method of forming a semiconductor device. A dielectric layer including a metal (e.g., a gate insulating layer and/or a tunnel insulating layer) may be formed on a substrate, and a metal nitride layer containing more metal component than nitrogen may be formed on the dielectric layer by PEALD. The metal nitride layer may be formed by alternately supplying a metal source including the metal and an NH3 gas, and providing plasma during a supplying of the NH3 gas. Because a material included in the dielectric layer and that included in the electrode formed thereon react with each other by a high temperature process, characteristics of the semiconductor device may be reduced or prevented from being degraded.

Dependencies are inferred from the claim text.