Semiconductor device and manufacturing method of the same

A manufacturing method of a semiconductor device, comprising the steps of:

• forming a gate electrode on a semiconductor substrate with a gate insulating film therebetween;
• introducing at least indium (In) into a surface layer of the semiconductor substrate on both sides of the gate electrode with the gate electrode as a mask;
• introducing carbon (C) into the surface layer of the semiconductor substrate on both sides of the gate electrode with the gate electrode as a mask;
• introducing at least phosphorus (P) into the surface layer of the semiconductor substrate on both sides of the gate electrode with the gate electrode as a mask;
• forming a sidewall film only on both side surfaces of the gate electrode;
• and
• introducing an n-type impurity into the surface layer of the semiconductor substrate on both sides of the sidewall film deeper than the phosphorous (P) in said fourth step with the sidewall film as a mask.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming a gate electrode on a semiconductor substrate with a gate insulating film therebetween;
• forming a dummy sidewall film only on both side surfaces of the gate electrode;
• introducing phosphorus (P) into a surface layer of the semiconductor substrate on both sides of the dummy sidewall film with the dummy sidewall film as a mask;
• introducing carbon (C) into the surface layer of the semiconductor substrate on both sides of the dummy sidewall film with the dummy sidewall film as a mask;
• removing the dummy sidewall film;
• introducing at least phosphorus (P) into the surface layer of the semiconductor substrate on both sides of the gate electrode with the gate electrode as a mask;
• and
• introducing at least indium (In) into the surface layer of the semiconductor substrate on both sides of the gate electrode with the gate electrode as a mask.