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US 2007/0166901 A1Published application
Method for fabricating soi device
OwnerJin-Yuan Leeinventor
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Abstract
A semiconductor-on-insulator (SOI) device is described, including a substrate, a first insulating layer and a second insulating layer on the substrate, a semiconductor layer covering the first and the second insulating layers, a gate dielectric layer and a gate on the semiconductor layer, and two doped regions as source/drain regions in the semiconductor layer beside the gate. The second insulating layer has a pattern, and has a material different from that of the first insulating layer.
Claims26
A method for fabricating an SOI device, comprising:
- forming a first insulating layer on a substrate;
- forming a second insulating layer on the first insulating layer;
- defining the second insulating layer;
- forming a semiconductor layer, covering the first and the second insulating layers;
- forming at least one semiconductor device based on the semiconductor layer.
2 more elements
A method for fabricating an SOI device, comprising:
- forming an insulator on a substrate;
- patterning but not etching through the insulator to form a cavity on the insulator;
- patterning the insulator to form an opening exposing a portion of the substrate;
- forming, based on epitaxial growth from the exposed substrate, a semiconductor layer covering the insulator, the opening and the cavity;
- and
- forming a semiconductor device based on the semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.