Method of synthesizing silicon wires
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYuan Yao, Li-Guo Xu, Shou-Shan Fan
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Abstract
A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
Claims17
A method of synthesizing silicon wires comprising:
- providing a substrate;
- forming a copper catalyst particle layer on a top surface of the substrate;
- and
- heating the substrate with the copper catalyst particle layer thereon and introducing a protective gas and a silicon-based reactive gas at conditions including a temperature of above about 450° C. and a pressure of below about 700 Torr to form the silicon wires on the substrate.
A synthesis method of silicon wires comprising:
- providing a substrate;
- forming a layer containing a copper compound on a top surface of the substrate, the layer containing the copper compound being in a form of one of a powder and a liquid solution;
- and
- heating the substrate with the layer containing the copper compound thereon in a flowing protective gas;
- and
- introducing a mixture of the protective gas and a silicon-containing reactive gas at a temperature of above about 450° C. and at a pressure of below about 700 Torr, thereby forming the silicon wires on the substrate.
A synthesis method of silicon wires, comprising:
- providing a substrate;
- forming a copper catalyst particle layer on a top surface of the substrate;
- putting the substrate with the copper catalyst particle layer thereon into a high temperature reactive device;
- heating the reactive device at a temperature of above about 450° C. in a flowing protective gas;
- and
- introducing a mixture of the protective gas and a silicon-based reactive gas into the reactive device at a pressure of below about 700 Torr, thereby forming the silicon wires on the substrate.
Dependencies are inferred from the claim text.