Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same
AssigneeAu Optronics Corporation
InventorsChien-Chou Hsu, Tsung-Yi Hsu
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Abstract
A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous silicon region is thinner than the second amorphous silicon region. The amorphous silicon structure is crystallized to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region.
Claims23
A method for forming a polysilicon structure, comprising:
- providing a substrate having a first region and a second region;
- forming an amorphous silicon structure on the substrate with a first amorphous silicon region in the first region and a second amorphous silicon region in the second region, wherein the first amorphous silicon region is thinner than the second amorphous silicon region;
- and
- crystallizing the amorphous silicon structure to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region, respectively.
A method for forming a polysilicon structure, comprising:
- providing a substrate having a first region, a second region, and a third region;
- forming an amorphous silicon structure on the substrate with a first amorphous silicon region in the first region, a second amorphous silicon region in the second region, and a third amorphous silicon region in the third region, wherein the first amorphous silicon region is thinner than the second amorphous silicon region which is thinner than the third amorphous silicon region;
- and
- crystallizing the amorphous silicon structure to form the polysilicon structure with a first polysilicon region, a second region, and a third polysilicon region corresponding to the first amorphous silicon region, a second amorphous silicon region, and a third amorphous silicon region, respectively.
Dependencies are inferred from the claim text.