STRAINED Si ON MULTIPLE MATERIALS FOR BULK OR SOI SUBSTRATES

A method of forming a semiconducting substrate comprising:

• providing a Si-containing substrate;
• forming a first pad stack atop a first portion of said Si-containing substrate, said first pad stack comprising a compressive layer positioned atop said first portion of said Si-containing substrate, a first semiconducting layer atop said compressive layer and a first etch barrier atop said first semiconducting layer;
• forming a second pad stack atop a second portion of said Si-containing substrate, said second pad stack comprising a tensile layer positioned atop said second portion of said Si-containing substrate, a second semiconducting layer atop said tensile layer, and a second etch barrier atop said second semiconducting layer;
• etching said Si-containing substrate selective to said first etch barrier and said second etch barrier, wherein said compressive layer elastically transfer a tensile strain to said first semiconducting layer and said tensile layer elastically transfers a compressive strain to said second semiconducting layer;
• removing said first etch barrier and said second etch barrier;
• and
• forming an isolation region between said first pad stack and said second pad stack.