Method and apparatus of fabricating semiconductor device
AssigneeFujitsu Limited
InventorMitsuaki Hori
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Abstract
An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma nitriding section introducing active nitrogen into the underlying film while keeping the temperature of the semiconductor substrate cooled by the cooling section at 100° C. or below. The semiconductor substrate is cooled by using liquid nitrogen or liquid helium, and by cooling a stage on which the semiconductor substrate is placed.
Claims20
A method of fabricating a semiconductor device comprising the steps of:
- forming a first insulating film on a semiconductor substrate;
- cooling said semiconductor substrate;
- and
- introducing active nitrogen into said first insulating film while keeping the temperature of said semiconductor substrate at 100° C. or below.
An apparatus of fabricating a semiconductor device comprising:
- a first insulating film forming unit forming a first insulating film on a semiconductor substrate;
- a cooling unit cooling said semiconductor substrate;
- and
- a nitriding unit introducing active nitrogen into said first insulating film, while keeping the temperature of said semiconductor substrate cooled by said cooling unit at 100° C. or below.
A method of fabricating a semiconductor device comprising the steps of:
- forming a first insulating film on a semiconductor substrate;
- cooling said semiconductor substrate;
- and
- introducing active nitrogen into said first insulating film while keeping the temperature of said semiconductor substrate at 100° C. or below,
- wherein said semiconductor substrate is cooled in a chamber used for introducing said active nitrogen into said first insulating film.
Dependencies are inferred from the claim text.