PFETS and methods of manufacturing the same
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Louis Hsu, Jack Mandelman, Haining Yang
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Abstract
In a first aspect, a first method of manufacturing a PFET on a substrate is provided. The first method includes the steps of (1) forming a gate channel region of the PFET having a first thickness on the substrate; and (2) forming at least one composite source/drain diffusion region of the PFET having a second thickness greater than the first thickness on the substrate. The at least one composite source/drain diffusion region is adapted to cause a strain in the gate channel region. Further, significantly all of the at least one composite source/drain diffusion region is below a bottom surface of a gate of the PFET. Numerous other aspects are provided.
Claims20
A method of manufacturing a PFET on a substrate, comprising:
- forming a gate channel region of the PFET having a first thickness on the substrate;
- and
- forming at least one composite source/drain diffusion region of the PFET having a second thickness greater than the first thickness on the substrate;
- wherein the at least one composite source/drain diffusion region is adapted to cause a strain in the gate channel region;
- and
- wherein significantly all of the at least one composite source/drain diffusion region is below a bottom surface of a gate of the PFET.
A PFET formed on a substrate, comprising:
- a gate channel region having a first thickness formed on the substrate;
- and
- at least one composite source/drain diffusion region having a second thickness greater than the first thickness formed on the substrate;
- wherein the at least one composite source/drain diffusion region is adapted to cause a strain in the gate channel region;
- and
- wherein significantly all of the at least one composite source/drain diffusion region is below a bottom surface of a gate of the PFET.
A substrate, comprising:
- a PFET having:
- a gate channel region having a first thickness formed on the substrate;
- and
- at least one composite source/drain diffusion region having a second thickness greater than the first thickness formed on the substrate;
- wherein the at least one composite source/drain diffusion region is adapted to cause a strain in the gate channel region;
- and
- wherein significantly all of the at least one composite source/drain diffusion region is below a bottom surface of a gate of the PFET.
Dependencies are inferred from the claim text.