Method of forming a phase-changeable structure
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Soo LIM, Jae-Seung HWANG, Hyun-Chul KIM, Jun-Soo BAE
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Abstract
In one embodiment, a phase-changeable structure can be formed by forming a phase-changeable layer on the lower electrode, forming a conductive layer on the phase-changeable layer, etching the conductive layer using a first etching material to form an upper electrode and etching the phase-changeable layer using a second etching material to form a phase-changeable pattern. The first etching material can include a first component containing fluorine. The second etching material does not contain chlorine.
Claims26
A method of forming a phase-changeable structure, the method comprising:
- providing a substrate having a lower electrode formed thereon;
- forming a phase-changeable layer on the lower electrode;
- forming a conductive layer including metal on the phase-changeable layer;
- etching the conductive layer using a first etching material to form an upper electrode, wherein the first etching material comprises a first component containing fluorine;
- and
- etching the phase-changeable layer using a second etching material to form a phase-changeable pattern between the upper electrode and the lower electrode, wherein the second etching material does not include chlorine.
A method of forming a phase-changeable structure, the method comprising:
- providing a substrate having a lower electrode formed thereon;
- forming a phase-changeable layer on the lower electrode;
- forming an upper electrode on the phase-changeable layer;
- and
- etching the phase-changeable layer using an etching material to form a phase-changeable pattern between the upper and lower electrodes, wherein atomic percentages of elements within the phase-changeable layer are substantially the same as atomic percentages of elements within the phase-changeable pattern.
A method of forming a phase-changeable structure, the method comprising:
- providing a substrate having a lower electrode formed thereon;
- forming a phase-changeable layer on the lower electrode;
- forming an upper electrode on the phase-changeable layer;
- and
- etching the phase-changeable layer using an etching material consisting essentially of tetraflouromethane and argon.
Dependencies are inferred from the claim text.