Method for fabricating substrate with nano structures, light emitting device and manufacturing method thereof
AssigneesLG Electronics Inc., LG Innotek Co., Ltd.
InventorsJong Kim, Hyun Cho
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Abstract
A method of fabricating a substrate with nano structures, light emitting device using the substrate and a manufacturing method thereof, wherein a substrate for growing a light emitting device is formed with nano agglomerations, and the substrate is etched by using the agglomerations as a mask to allow nano structures to be formed on the substrate, thereby enabling to grow a crystal defect-reduced, reliability-improved, good quality light emitting structure, and wherein the light emitting structure is formed with nano structures to enhance the light extraction efficiency.
Claims20
A method of fabricating a substrate with nano structures comprising:
- forming a protective film on the substrate;
- forming a thin film layer including a metal on the protective film;
- performing a thermal process on the thin film layer including the metal;
- forming a plurality of nano agglomerations on the protective film;
- etching the protective film using the plurality of nano agglomerations as a mask;
- removing the plurality of nano agglomerations;
- etching a top surface of the substrate using the etched protective film as a mask to form a plurality of nano structures on the substrate;
- and
- removing the protective film.
A method of fabricating a light emitting device comprising:
- forming a plurality of nano structures on a substrate;
- forming on the plurality of nano structures a light emitting structure including a first semiconductor layer having a first polarity, an active layer and a second semiconductor layer having a polarity opposite that of the first semiconductor layer;
- forming a support on the light emitting structure;
- removing the substrate from the light emitting structure;
- removing the support;
- forming a first electrode on a bottom surface of the first semiconductor layer of the light emitting structure;
- and
- forming a second electrode on the second semiconductor layer.
A light emitting device comprising:
- a first semiconductor layer with a plurality of nano structures and having a first polarity;
- an active layer formed on a top surface of the first semiconductor layer;
- a second semiconductor layer formed on a top surface of the active layer and having a polarity opposite the first polarity;
- a first electrode formed on a bottom surface of the first semiconductor layer;
- and
- a second electrode formed on a top surface of the second semiconductor layer.
Dependencies are inferred from the claim text.