Gallium nitride based light emitting diode and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsDong Jeon, Jae Han, Pil Kang
Life of this patent
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Abstract
A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.
Claims32
A GaN-based LED comprising:
- a substrate;
- an n-type GaN layer formed on the substrate;
- an active layer formed on a predetermined region of the n-type GaN layer;
- a p-type GaN layer formed on the active layer;
- a transparent electrode formed on the p-type GaN layer;
- a p-electrode formed on the transparent electrode;
- an n-type electrode formed on the n-type GaN layer on which the active layer is not formed;
- and
- a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.
A GaN-based LED comprising:
- a substrate;
- an n-type GaN layer formed on the substrate;
- an active layer formed on a predetermined region of the n-type GaN layer;
- a p-type GaN layer formed on the active layer;
- a transparent electrode formed on the p-type GaN layer;
- a p-electrode formed on the transparent electrode;
- an n-electrode formed on the n-type GaN layer on which the active layer is not formed;
- and
- a protective film formed on a resulting structure between the transparent electrode and the n-electrode, the protective film being composed of a transparent layer subjected to an ashing process.
A method of manufacturing a GaN-based LED comprising:
- sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on a substrate;
- mesa-etching portions of the p-type GaN layer, the active layer, and the n-type GaN layer so as to expose a portion of the top surface of the n-type GaN layer;
- forming a transparent layer on the entire surface of the resulting structure where a portion of the n-type GaN layer is exposed;
- forming a mask on the top surface of the transparent layer, the mask opening a region of the transparent layer excluding a transparent electrode formation region;
- and
- performing a plasma oxidation process on the transparent layer exposed through the mask, thereby forming a protective film.
A method of manufacturing a GaN-based LED comprising:
- sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on a substrate;
- mesa-etching portions of the p-type GaN layer, the active layer, and the n-type GaN layer so as to expose a portion of the top surface of the n-type GaN layer;
- forming a transparent layer on the entire surface of the resulting structure where a portion of the n-type GaN layer is exposed;
- forming a mask on the top surface of the transparent layer, the mask opening a region of the transparent layer excluding a transparent electrode formation region;
- and
- performing an ashing process on the transparent layer exposed through the mask, thereby forming a protective film.
Dependencies are inferred from the claim text.