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US 2007/0166851 A1Published application
LIGHT EMITTING DIODES (LEDs) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING
AssigneeSemiLEDS Optoelectronics Co., Ltd.
InventorsChuong Tran, Trung Doan, Chen-Fu Chu, Hao-Chun Cheng, Feng-Hsu Fan
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Abstract
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Claims22
A method comprising:
- providing a light-emitting diode (LED) wafer assembly, comprising:
- a conductive substrate;
- a p-doped layer disposed above the conductive substrate;
- an active layer disposed above the p-doped layer;
- an n-doped layer disposed above the active layer;
- applying a mask to a surface of the n-doped layer;
- etching the surface of the n-doped layer such that etched pits are formed in the surface;
- removing the mask;
- and
- roughening or texturing the surface of the n-doped layer including the etched pits.
7 more elements
A method comprising:
- providing a light-emitting diode (LED) wafer assembly, comprising:
- a conductive substrate;
- a p-doped layer disposed above the conductive substrate;
- an active layer disposed above the p-doped layer;
- an n-doped layer disposed above the active layer;
- applying a mask to a surface of the n-doped layer;
- etching the surface of the n-doped layer such that etched pits are formed in the surface;
- removing the mask;
- and
- immersing the surface of the n-doped layer including the etched pits in an electrolytic solution;
- applying an electrical bias to the conductive substrate;
- and
- illuminating the surface such that photoelectrochemical (PEC) oxidation and etching occurs to roughen the surface of the n-doped layer including surfaces of the etched pits.
10 more elements
A method comprising:
- applying a mask to a surface of a light-emitting diode (LED) wafer;
- etching the surface of the LED wafer such that etched pits are formed in the surface;
- removing the mask;
- and
- roughening or texturing the surface of the LED wafer including the etched pits.
2 more elements
Dependencies are inferred from the claim text.