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US 2007/0166844 A1Published application
Ethcing method and system
AssigneeUlvac, Inc.
InventorsYasuhiro Morikawa, Toshio Hayashi, Koukou Suu
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AssigneeUlvac, Inc.
InventorsYasuhiro Morikawa, Toshio Hayashi, Koukou Suu
Estimating the term…
An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1).
An etching system comprising plasma generating means for generating plasma in a vacuum chamber, a substrate electrode arranged in the vacuum chamber and a high frequency bias power source applying high frequency bias power to the substrate electrode and etching a substrate mounted on the substrate electrode, wherein the system comprises:
An etching method for etching a substrate arranged in a vacuum chamber by generating plasma, wherein the method comprises repetitively conducting:
Dependencies are inferred from the claim text.