Method for fabricating magnetoresistance multi-layer
OwnerChih-Huang Lai, Sheng-Huang Huang +4inventors
InventorsChih-Huang Lai, Sheng-Huang Huang, Cheng-Han Yang, Yung-Hung Wang, Wei-Chuan Chen, Kuei-Hung Shen
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Abstract
A fabrication method of a magnetoresistance multi-layer is provided. The method includes forming a multi-layer with at least an antiferromagnetic layer and performing an ion irradiation process to the multi-layer to transform a disordered structure of the antiferromagnetic layer to an ordered structure. Accordingly, the process time can be reduced and the interdiffusion in the multi-layer can be prevented.
Claims15
A fabrication method of a magnetoresistance multi-layer film, the method comprising:
- forming a multi-layer film comprising at least an antiferromagnetic metal layer;
- and
- performing an ion irradiation process on the multi-layer film to transform the antiferromagnetic metal layer from a disordered structure to an ordered structure.
A fabrication method of a magnetoresistance multi-layer film, wherein the method comprises at least:
- forming a multi-layer film on a wafer, wherein the multi-layer film comprises at least an antiferromagnetic metal layer;
- providing a magnetic field to the wafer, wherein a direction of the magnetic field is along a first direction;
- performing an ion irradiation process on a first region of the wafer to transform the antiferromagnetic metal layer in the first region from a disordered structure to an ordered structure, wherein a direction of an easy axis of the antiferromagnetic metal layer in the first region is aligned with the first direction;
- changing the direction of the easy axis of the antiferromagnetic metal layer or the direction of the magnetic field to a second direction;
- and
- performing an ion irradiation process on a second region of the wafer to transform the antiferromagnetic metal layer in the second region to a disordered structure to an ordered structure, and aligning an easy axis of the antiferromagnetic metal layer in the second region with the direction of the magnetic field.
Dependencies are inferred from the claim text.