Exposure system, exposure method, and method for manufacturing semiconductor device

An exposure method comprising:

• forming a plurality of test resist patterns by scanning and projecting an image of a mask pattern onto a first resist layer with a plurality of test values of a dose;
• defining a plurality of coordinates of mask positions along the mask pattern in a scan direction;
• measuring a plurality of actual values of a mask line width of the mask pattern at the plurality of coordinates;
• measuring a plurality of actual values of a resist line width of each of the plurality of test resist patterns at a plurality of projected positions, the plurality of projected positions corresponding to the plurality of mask positions in the scan direction;
• collecting a relationship among the mask line width, the resist line width, and the dose at the plurality of coordinates of the mask positions;
• and
• scanning and projecting the image of the mask pattern onto a second resist layer with changing the dose depending on the plurality of coordinates of the mask positions, based on the relationship, to make the resist line width constant in the scan direction.

A method for manufacturing a semiconductor device, comprising:

• forming a first resist layer on a first semiconductor substrate;
• forming a plurality of test resist patterns on the first semiconductor substrate by scanning and projecting an image of a mask pattern onto the first resist layer with a plurality of test values of a dose;
• defining a plurality of coordinates of mask positions along the mask pattern in a scan direction;
• measuring a plurality of actual values of a mask line width of the mask pattern at the plurality of coordinates;
• measuring a plurality of actual values of a resist line width of each of the plurality of test resist patterns at a plurality of projected positions, the plurality of projected positions corresponding to the plurality of mask positions in the scan direction;
• collecting a relationship among the mask line width, the resist line width, and the dose at the plurality of coordinates of the mask positions;
• forming a second resist layer on a second semiconductor substrate;
• scanning and projecting the image of the mask pattern onto the second resist layer with changing the dose depending on the plurality of coordinates of the mask positions, based on the relationship, to make the resist line width constant in the scan direction;
• and
• forming a product resist pattern corresponding to the image of the mask pattern on the second semiconductor substrate.