US 2007/0165686 A1 · Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method

Abstract

An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP cladding layer 14 and a p-type GaAs cap layer 16 are formed on an n-type GaAs substrate 2. The p-type cladding layer 14 and the p-type cap layer 16 are formed in a ridge portion 15, and a narrow width portion 17 is formed including an upper portion of the n-type substrate 2 and the layers there above. An SiO2 film 18 is formed on the side surfaces of the ridge portion 15, the surfaces of the narrow width portion 17 and the surface of a step portion 2a of the n-type substrate 2. A p-side electrode layer 23 is formed on the surfaces of the SiO2 film 18 formed on ridge portion 15 and the narrow width portion 17.

Claims12

Dependent claims

A semiconductor laser device comprising:

a substrate;
a lower cladding layer formed on the substrate;
an active layer formed on the lower cladding layer;
a first upper cladding layer formed on the active layer;
a dielectric that covers side surfaces of the first upper cladding layer, the active layer and the lower cladding layer;
and
an electrode layer that covers the dielectric while being electrically connected to the first upper cladding layer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method

Life of this patent

Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method

Life of this patent

Abstract

Claims12