Semiconductor laser device, method for manufacturing the same and optical pickup apparatus
AssigneeSharp Kabushiki Kaisha
InventorOsamu Hamaoka
Life of this patent
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Abstract
A semiconductor laser chip is mounted on one surface of an electrode lead for chip mounting having a heat release region for releasing heat around the semiconductor laser chip. Therefore, it is possible to release heat of the semiconductor laser chip to the chip mounting lead and release the heat from the heat release region, thereby suppressing increase of a temperature of the semiconductor laser chip and suppressing shortening of life of the semiconductor laser chip.
Claims13
A semiconductor laser device comprising:
- a semiconductor laser chip;
- a plurality of electrode leads that are electrically conductive and include an electrode lead for chip mounting on which the semiconductor laser chip is mounted;
- a base made of synthetic resin, for holding the electrode leads in an embedded state, the base being electrically insulating and having a protruding portion on which the semiconductor laser chip is mounted, and a face formed at a basal end of the protruding portion to face an emission direction of a laser beam emitted by the semiconductor laser chip;
- and
- a cap made of synthetic resin, the cap having an opening formed so as to face an emission end face of the semiconductor laser chip, and being integrally joined to the base in a state of covering the protruding portion, on the face formed at the basal end of the protruding portion,
- wherein one surface of the electrode lead for chip mounting is exposed from the protruding portion, and the one surface has a heat release region broader than a region for mounting the semiconductor laser chip, around the semiconductor laser chip.
The semiconductor laser device of claim 9, further comprising a hologram element that is disposed in the cap and includes a light transmitting base member having a surface in a direction leaving the semiconductor laser chip on which surface a hologram pattern is formed,
- wherein the hologram pattern is formed so that a center thereof is shifted to a side of an end of the hologram element in a direction leaving the light receiving element with respect to a center of the hologram element.
The semiconductor laser device of 1, wherein the base and the cap are made of polyphenylene sulfide.
A method for manufacturing a semiconductor laser device comprising the steps of:
- embedding a plurality of electrode leads that are electrically conductive and include an electrode lead for chip mounting on which the semiconductor laser chip is mounted, in a base made of synthetic resin which base is electrically insulating and has a protruding portion on which the semiconductor laser chip is mounted, and a face which is formed at a basal end of the protruding portion to face an emission direction of a laser beam emitted by the semiconductor laser chip, to hold the plurality of electrode leads in an embedded state;
- mounting the semiconductor laser chip on the electrode lead for chip mounting;
- connecting the semiconductor laser chip and the electrode leads by bonding-wires;
- placing a cap which is made of synthetic resin and has an opening, on a reference face so that the opening faces an emission end face of the semiconductor laser chip and a part of the face formed at the basal end of the protruding portion outwardly protrudes;
- and
- joining the base and the cap by ultrasonic fusion.
Dependencies are inferred from the claim text.