Local wordline driver scheme to avoid fails due to floating wordline in a segmented wordline driver scheme

A method for accessing a local wordline in a segmented memory, the method comprising:

• receiving a memory address;
• determining if the received memory address corresponds to the local wordline;
• if the received memory address corresponds to the local wordline, applying a first voltage to the local wordline via a local wordline driver located at one end of the local wordline;
• and
• if the received memory address does not correspond to the local wordline, applying a second voltage to the local wordline, wherein the second voltage is applied to the local wordline via a pull-down circuit located at an opposite end of the local wordline from the one end of the local wordline wherein one or more memory cells are attached to local wordline between the local wordline driver and the wordline pull-down circuit.

A memory device comprising:

• a local wordline;
• a local wordline driver connected to a first end of the local wordline;
• a pull-down circuit connected to a second end of the local wordline opposite the first end, wherein one or more memory cells are attached to the local wordline between the first end of the local wordline and the second end of the local wordline;
• and
• circuitry configured to:
• during an access to the local wordline, activate the local wordline driver, thereby applying a first voltage to the local wordline;
• and
• after the access to the local wordline, activate the pull-down circuit, thereby applying a second voltage to the local wordline.

A DRAM memory device, comprising:

• a memory array comprising:
• a plurality of segments, wherein each segment comprises:
• i) a plurality of local wordlines, and wherein each local wordline comprises:
• a local wordline driver connected to a first end of the local wordline;
• and
• a pull down circuit connect to a second end of the local wordline opposite the first end, wherein one or more memory cells are attached to each of the plurality of local wordlines respectively between the first end of each local wordline and the second end of each local wordline;
• and
• ii) a plurality of main wordlines, wherein each main wordline is used to access a corresponding plurality of local wordlines;
• decoder circuitry configured to:
• receive a memory address;
• determine if the received memory address corresponds to one of the plurality of local wordlines;
• if the received memory address corresponds one of the plurality of local wordlines, apply a first voltage to the one local wordline via the local wordline driver connected to the one local wordline;
• and
• if the received memory address does not correspond to the one local wordline, apply a second voltage to the one local wordline via the respective pull-down circuit of the one local wordline.

A memory device comprising:

• a local wordline;
• means for driving a local wordline connected to a first end of the local wordline;
• a means for applying a voltage connected to a second end of the local wordline opposite the first end, wherein one or more memory cells are attached to the local wordline between the first end of the local wordline and the second end of the local wordline;
• and
• means for accessing configured to:
• during an access to the local wordline, activate the local wordline driver, thereby applying a first voltage to the local wordline;
• and
• after the access to the local wordline, activate the pull-down circuit, thereby applying a second voltage to the local wordline.