Phase change memory device and method for manufacturing phase change memory device
AssigneeElpida Memory, Inc.
InventorTsutomu Hayakawa
Life of this patent
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Abstract
A composite plug 104 is formed, and both a first plug (TiN) 106 and a second plug (W) 108 are disposed in one contact hole; the first plug (TiN) 106 functions as a heater electrode and the second plug (W) 108 functions as a contact plug. This eliminates the need to stack the heater electrode on the contact plug. The resistivities R11 and R12 of the first and second plugs of the composite plug 104 are in a relationship R11>R12.
Claims17
A phase change memory device in which a current is passed through a current path composed of a conductor layer, a first contact plug connected to the conductor layer, a heater electrode connected to the contact plug, and a phase change layer connected to the heater electrode to generate Joule heat at an interface between the phase change layer and the heater electrode to change a phase of the phase change layer to write information, the phase change memory device comprising:
- a first interlayer insulating film in which a first contact hole is formed;
- and
- a composite plug burried in the first contact hole, where the composite plug is composed of a first plug consisting of a first conductive material and acting as the heater electrode and a second plug consisting of a second conductive material having a lower resistivity than the first conductive material and acting as the first contact plug.
Dependencies are inferred from the claim text.