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US 2007/0165434 A1Published application
Resistive RAM having at least one varistor and methods of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Hyun Lee, Eun-Hong Lee, Sang-Jun Choi, In-Kyeong Yoo, Myoung-Jae Lee
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Abstract
Resistive memory devices having at least one varistor and methods of operating the same are disclosed. The resistive memory device may include at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one top electrode line and the at least one bottom electrode line including a varistor and a data storage layer.
Claims28
A memory device comprising:
- at least one bottom electrode line;
- at least one top electrode line crossing the at least one bottom electrode line;
- and
- at least one stack structure disposed at an intersection of the at least one bottom electrode line and the at least one top electrode line, including a varistor and a data storage layer.
1 more element
A method of operating a memory device, comprising:
- providing the memory device including at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one bottom electrode line and the at least one top electrode line, including a varistor and a data storage layer;
- and
- applying a voltage between the bottom electrode line and the top electrode line.
Dependencies are inferred from the claim text.