Thin-film device and method of manufacturing same
AssigneeTDK Corporation
InventorsHajime Kuwajima, Masahiro Miyazaki, Akira Furuya
Life of this patent
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Abstract
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer incorporates: an electrode film; a first layer formed on the electrode film by electroplating; and a second layer formed on the first layer by PVD or CVD. The grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.
Claims11
A thin-film device comprising:
- a lower conductor layer;
- a dielectric film disposed on the lower conductor layer;
- and
- an upper conductor layer disposed on the dielectric film, wherein:
- the lower conductor layer incorporates:
- a first layer made of a metal;
- and a second layer made of a metal and disposed between the first layer and the dielectric film;
- and
- a grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.
A method of manufacturing a thin-film device comprising a lower conductor layer, a dielectric film disposed on the lower conductor layer, and an upper conductor layer disposed on the dielectric film, wherein:
- the lower conductor layer incorporates a first layer made of a metal and a second layer made of a metal and disposed between the first layer and the dielectric film, the method comprising the steps of
- forming the first layer by electroplating;
- forming the second layer on the first layer by physical vapor deposition or chemical vapor deposition;
- forming the dielectric film on the second layer;
- and
- forming the upper conductor layer on the dielectric film.
Dependencies are inferred from the claim text.