Tunnel-type magnetic detecting device having laminated seed layer

A tunnel-type magnetic detecting device comprising:

• a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with an insulating barrier layer therebetween and which varies in magnetization by an external magnetic field;
• and
• a seed layer provided below the magnetoresistive effect part,
• wherein the seed layer includes a Co layer laminated on an NiFeCr layer, and an Al layer laminated on the Co layer.

A tunnel-type magnetic detecting device comprising:

• a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with an insulating barrier layer therebetween and which varies in magnetization by an external magnetic field;
• and
• a seed layer provided below the magnetoresistive effect part,
• wherein the seed layer includes mainly NiFeCr, and the average concentration of Al in a surface region of the seed layer is higher than the average concentration of Al in a seed region below the surface region.

A tunnel-type magnetic detecting device comprising:

• a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with an insulating barrier layer therebetween and which varies in magnetization by an external magnetic field;
• and
• a seed layer provided below the magnetoresistive effect part,
• wherein the seed layer includes mainly NiFeCr, a high-concentration Co region and a high-concentration Al region provided above the high-concentration Co region exist in a surface region of the seed layer.