Projection system employing semiconductor diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorJae-hee Cho
Life of this patent
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Abstract
A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.
Claims14
A projection system comprising:
- a light source module emitting a plurality of monochromic lights;
- at least one optical modulator modulating light emitted by the light source module according to a color signal, wherein the at least one optical modulator includes at least one semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer, the at least one semiconductor diode absorbing or transmitting monochromic light from the light source module according to the value of a reverse bias voltage corresponding the color signal;
- a color combining prism combining the monochromic lights including light modulated by the optical modulator to form an image;
- and
- a projection lens projecting the image formed by the color combining prism toward a screen.
An optical modulator system modulating light according to a color signal, comprising:
- a first optical modulator having an array of a plurality of said semiconductor diodes in which band gap energy of the intrinsic semiconductor layer is designed to transmit a first wavelength of light when the reverse bias voltage is not applied;
- a second optical modulator having an array of a plurality of said semiconductor diodes in which band gap energy of the intrinsic semiconductor layer is designed to transmit a second wavelength of light when the reverse bias voltage is not applied;
- and
- a third optical modulator having an array of a plurality of said semiconductor diodes in which band gap energy of the intrinsic semiconductor layer is designed to transmit a third wavelength of light when the reverse bias voltage is not applied, the first second and third wavelengths being different from each other,
- wherein each of the optical modulators include a plurality of semiconductor diodes, each of said diodes including
- a P type semiconductor layer,
- an intrinsic semiconductor layer having a band gap energy selected to correspond to the first, second or third wavelength of light, and
- an N type semiconductor layer that absorbs or transmits monochromic light according to the value of a reverse bias voltage corresponding to the color signal.
Dependencies are inferred from the claim text.