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US 2007/0165126 A1Published application
CMOS image sensor
AssigneeMagnaChip Semiconductor, Ltd.
InventorWon-Ho Lee
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.
Claims15
A complementary metal oxide semiconductor (CMOS) image sensor comprising:
- a photodiode;
- a plurality of transistors for transferring charges accumulated at the photodiode to one column line;
- and
- voltage dropping means connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.
1 more element
A CMOS image sensor comprising:
- a photodiode;
- a first transistor for resetting the photodiode;
- a second transistor for amplifying and outputting a charge accumulated at the photodiode;
- a third transistor for transferring a signal output from the second transistor to a column line;
- and
- voltage dropping means connected to a gate electrode of a first or third transistor for expanding a saturation region of the first or third transistor by dropping down a gate voltage inputted to the gate electrode of the first or third transistor.
3 more elements
A CMOS image sensor comprising:
- a photodiode;
- a first transistor for resetting the photodiode;
- a second transistor for transferring a charge accumulated at the photodiode to a floating diffusion region;
- a third transistor for amplifying and outputting a charge accumulated at the floating diffusion region;
- a fourth transistor for transferring a signal output from the third transistor to one column line;
- and
- voltage dropping means connected to a gate electrode of a first, second or fourth transistor for expanding a saturation region of the first, second or fourth transistor by dropping down a gate voltage inputted to the gate electrode of the first, second or fourth transistor.
4 more elements
Dependencies are inferred from the claim text.