US 2007/0164809 A1Published application

Voltage generation circuit and semiconductor integrated circuit device

OwnerKeiko Fukuda, Mitsuru Hiraki +5inventors

InventorsKeiko Fukuda, Mitsuru Hiraki, Masashi Horiguchi, Takesada Akiba, Shuzo Ichiki, Hideki Tsunoda, Akihiro Kitagawa

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Abstract

A constant current is formed by supplying voltage differences between bases and emitters of a first transistor which allows a first current to flow in the emitter thereof and a second transistor which allows a second current having a current density larger than a current density of the first transistor to flow in an emitter thereof to a first resistance. A second resistance is provided on a ground potential side of a circuit in series with the first resistance. A third and a fourth resistances are provided between collectors and the power supply voltages of the first transistor and the second transistor. Both collector voltages of the first and second transistors are supplied to a differential amplifier circuit having the CMOS constitution thus forming an output voltage and, at the same time, the output voltage is supplied to bases of the first transistor and the second transistor in common.

Claims18

Dependent claims

A voltage generating circuit comprising:

a first transistor which allows a first current to flow in an emitter thereof;
a second transistor which allows a second current which has a current density larger than a current density of the emitter of the first transistor to flow in an emitter thereof;
a first resistance which is provided between the emitter of the first transistor and the emitter of the second transistor;
a second resistance which is provided between the emitter of the second transistor and a ground potential of the circuit;
a third resistance which is provided between a collector of the first transistor and a power source voltage;
a fourth resistance which is provided between a collector of the second transistor and the power source voltage;
and
a differential amplifier circuit having the CMOS constitution which forms an output voltage upon receiving a collector voltage of the first transistor and a collector voltage of the second transistor and, at the same time, supplies the output voltage to bases of the first transistor and the second transistor in common, wherein
the first transistor and the second transistor are constituted by making us of a semiconductor region formed in a process of a CMOS circuit which constitutes the differential amplifier circuit.

6 more elements

A semiconductor integrated circuit device including a reference voltage generating circuit which comprises:

a first transistor which allows a first current to flow in an emitter thereof;
a second transistor which allows a second current which has a current density larger than a current density of the emitter of the first transistor to flow in an emitter thereof;
a first resistance which is provided between the emitter of the first transistor and the emitter of the second transistor;
a second resistance which is provided between the emitter of the second transistor and a ground potential of the circuit which is supplied from an external terminal;
a third resistance which is provided between a collector of the first transistor and a power source voltage which is supplied from an external terminal;
a fourth resistance which is provided between a collector of the second transistor and the power source voltage;
and
a differential amplifier circuit having the CMOS constitution which forms an output voltage upon receiving a collector voltage of the first transistor and a collector voltage of the second transistor and, at the same time, supplies the output voltage to bases of the first transistor and the second transistor in common, wherein
the first transistor and the second transistor are constituted by making use of a semiconductor region formed in a process of a CMOS circuit which constitutes the differential amplifier circuit.

6 more elements

Dependencies are inferred from the claim text.