Method of measuring flat-band status capacitance of a gate oxide in a MOS transistor device

Abstract

A method of measuring flat-band status capacitance of a gate oxide in a MOS transistor device, comprises: mounting a measurement object wafer in a probe station connected to a capacitance measuring unit; measuring accumulation capacitance (Cox) of a gate oxide of the wafer using the capacitance measuring unit; measuring capacitance (Cmeas) from the gate while changing a gate voltage (Vgs) of the wafer using the capacitance measuring unit; computing the thickness of a depletion layer (Winv) using the measured accumulation capacitance (Cox) and the measured gate capacitance (Cmeas); computing bulk density (Nx) on the basis of the gate voltage (Vgs) in the case that depth of a depletion layer is 90% of a predetermined reference depth; computing debye length LD using the bulk density (Nx); and computing flat-band status capacitance using the accumulation capacitance (Cox) of the gate oxide and the debye length LD.

Dependencies are inferred from the claim text.