Organic electroluminescent element and the manufacturing method
AssigneeToppan Printing Co., Ltd.
InventorsTetsuo Oosono, Akio Nakamura, Tsunenori Komori
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Abstract
One embodiment of an organic electroluminescent element of present invention includes a substrate, a first electrode on the substrate, an organic luminescent medium layer including an organic luminescent layer on the first electrode, a second electrode on the organic luminescent medium layer and barrier film formed on the second electrode. The organic luminescent medium layer is sandwiched between the first electrode and the second electrode. Film density of the barrier film changes in thickness direction.
Claims12
An organic electroluminescent element including a substrate, a first electrode on the substrate, an organic luminescent medium layer including an organic luminescent layer on the first electrode, a second electrode on the organic luminescent medium layer and a barrier film formed on the second electrode,
- wherein the organic luminescent medium layer is sandwiched between the first electrode and the second electrode,
- wherein film density of the barrier film changes in thickness direction, and wherein film density of the barrier film of the second electrode side is smaller than film density of the barrier film of the substrate side.
An organic electroluminescent element including a substrate, and a first electrode, an organic luminescent medium layer, a second electrode and barrier film formed on the substrate,
- wherein the barrier film comprises a water-vapor-proofing silicon nitride film and an oxidative silicon nitride film.
A manufacturing method of an organic electroluminescent element including a substrate, and a first electrode, an organic luminescent medium layer, a second electrode and barrier film formed on the substrate,
- wherein the barrier film comprises a water-vapor-proofing silicon nitride film and an oxidative silicon nitride film,
- said method includes forming the water-vapor-proofing silicon nitride film and the oxidative silicon nitride film by a plasma enhanced CVD method.
Dependencies are inferred from the claim text.