Semiconductor device, dicing saw and method for manufacturing the semiconductor device
OwnerTakayuki Matsudainventor
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Abstract
A first interlayer insulating film and a second interlayer insulating film are formed on a semiconductor substrate and first Cu interconnections are formed in the first interlayer insulating film and second Cu interconnections are formed in the second interlayer insulating film. Pad electrodes are formed on the second Cu interconnections with a barrier metal interposed therebetween. The pad electrodes are made of AlCu containing Mg.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed on the semiconductor substrate;
- an interconnection formed on the insulating film and contains a first metal;
- and
- an electrode electrically connected to the interconnection and contains a second metal and an element having a higher ionization tendency than the second metal, wherein
- the content of the element in the electrode is lower than the content of the second metal in the electrode.
A dicing saw for dicing a semiconductor substrate contains an element having a higher ionization tendency than Al.
A method for manufacturing a semiconductor device comprising the steps of:
- (a) forming an insulating film on a semiconductor substrate;
- (b) forming an interconnection containing a first metal on the insulating film;
- and
- (c) forming an electrode electrically connected to the interconnection and contains a second metal and an element having a higher ionization tendency than the second metal, wherein
- the content of the element in the electrode is lower than the content of the second metal in the electrode.
A method for manufacturing a semiconductor device including the step of dicing a semiconductor substrate, wherein
- the semiconductor device includes an interconnection containing a first metal and an electrode electrically connected to the interconnection and contains a second metal having a higher ionization tendency than the first metal and
- the dicing is carried out using a dicing saw containing an element having a higher ionization tendency than that of the second metal.
A method for manufacturing a semiconductor device including the step of dicing a semiconductor substrate, wherein
- the semiconductor device includes an interconnection containing a first metal and an electrode electrically connected to the interconnection and contains a second metal having a higher ionization tendency than the first metal and
- the dicing is carried out while an ionization inhibitor for inhibiting the ionization of the second metal is supplied.
Dependencies are inferred from the claim text.