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US 2007/0164437 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsNorikazu Nishiyama, Korekazu Ueyama, Yoshiaki Oku
Life of this patent
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Abstract
There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.
Claims6
1-10. (canceled)
A semiconductor device comprising:
- a substrate, the surface of the substrate being subjected to a hydrophilic treatment or a hydrophobic treatment;
- an inorganic insulating film having a porous area defined by substantially all cylindrical vacancies,
- wherein the cylindrical vacancies in the porous area are constrained to be oriented substantially in parallel with the surface of the substrate solely in areas of the substrate surface subjected to the hydrophilic treatment or the hydrophobic treatment, and wherein substantially all the vacancies are arranged at periodic intervals.
Dependencies are inferred from the claim text.