US 2007/0164410 A1 · Wafer level packaging cap and fabrication method thereof

Abstract

A fabrication method of a wafer level packaging cap for covering a device wafer provided with a device thereon, includes forming an insulating layer on a wafer; removing a predetermined part of the insulating layer and exposing an upper surface of the wafer; forming a cap pad extending from an upper surface and the exposed surface of the wafer; forming a cavity on a lower surface of the wafer corresponding to the cap pad; etching a bottom surface of the cavity and exposing the cap pad which is connected to the wafer through the cavity; and forming metal lines extending from the lower surface of the wafer and the cavity, to electrically connect the cap pad which is exposed through the cavity.

Claims25

Dependent claims

A wafer level packaging cap for covering a device wafer provided with a device thereon, the wafer level packaging cap, comprising:

a cap substrate formed with a predetermined cavity for housing the device on a lower surface, the cap having a first passing hole penetrating therethrough and adapted to be joined with the device wafer;
an insulating layer formed on an upper surface of the cap substrate and having a second passing hole corresponding to the first passing hole;
a cap pad formed on an upper surface of the insulating layer;
and
metal lines formed on a lower surface of the cap substrate adapted to correspond to a plurality of device pads which are electrically connected to the device;
wherein the metal lines and the cap pad are electrically connected to each other at the first and second passing holes.

3 more elements

Dependencies are inferred from the claim text.

Wafer level packaging cap and fabrication method thereof

Life of this patent

Wafer level packaging cap and fabrication method thereof

Life of this patent

Abstract

Claims25