Co-sputter deposition of metal-doped chalcogenides

A method of forming a memory cell body, comprising:

• selecting a first deposition rate of a metal selected from the group consisting of silver and copper;
• selecting a second deposition rate of germanium selenide;
• controlling the first deposition rate by selecting a first sputtering power;
• and
• controlling the second deposition rate by selecting a second sputtering power.

A method of forming a metal-doped chalcogenide layer of a memory cell body, comprising:

• selecting a first deposition rate for a first material;
• selecting a second deposition rate of a second material;
• controlling the first deposition rate by selecting at least one first sputtering power to deposit the first material;
• and
• controlling the second deposition rate by selecting at least one second sputtering power to deposit the second material, wherein the first material and the second material are sputtered simultaneously to form a layer having a predetermined ratio of said first and second materials.

A process to configure a deposition system to fabricate a memory cell body, comprising:

• setting a desired ratio of a metal and germanium selenide for a metal-doped germanium selenide layer of a memory cell body;
• calculating a first deposition rate for the metal and a second deposition rate for the germanium selenide that provides the desired ratio;
• relating the calculated first deposition rate to a first sputter power for a metal target;
• relating the calculated second deposition rate to a second sputter power for a germanium selenide target;
• configuring a deposition system to sputter the metal from the metal target at the first sputter power;
• and
• configuring the deposition system to sputter germanium selenide from the germanium selenide target with the calculated second sputter power.

A process to configure a deposition system to fabricate a memory cell body, comprising:

• indicating to the system a desired ratio of a metal and germanium selenide to be provided in a layer in the memory cell body;
• calculating a first deposition rate for a first material that includes the metal and calculating a second deposition rate for a second material that does not include the metal, wherein the calculated first and second deposition rates provide the desired ratio;
• relating the calculated first deposition rate to a first sputter power for a first target;
• relating the calculated second deposition rate to a second sputter power for a second target;
• configuring the deposition system to sputter the first material from the first target at the first sputter power;
• and
• configuring the deposition system to sputter the second material from the second target with the second sputter power.

A process to configure a deposition system for forming a memory cell, comprising:

• indicating a desired first ratio of a metal and germanium selenide to be provided in a layer in a memory cell body;
• indicating a desired second ratio of germanium to selenium in the germanium selenide to be provided in said layer;
• calculating a first deposition rate for the metal, a second deposition rate for germanium, and a third deposition rate for selenium that provides the indicated first and second ratios;
• relating the calculated first deposition rate to a first sputter power level for a metal target;
• relating the calculated second deposition rate to a second sputter power level for a germanium target;
• relating the calculated third deposition rate to a third sputter power level for a selenium target;
• and
• configuring the deposition system to sputter the metal from the metal target, to sputter germanium from the germanium target, and to sputter selenium from the selenium target at the respective calculated first, second, and third sputter power levels.