Back to results
US 2007/0164392 A1Published application
Semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorHyeong Gyun Jeong
Life of this patent
Estimating the term…
Abstract
Embodiments relate to a semiconductor device. According to embodiments, a semiconductor device may include a plurality of wells formed on a substrate, threshold voltage control ion layers formed around surfaces of the wells, device isolation layers arranged between the wells, ion compensation layers formed on edges and bottoms of the device isolation layers, and a gate formed on the well.
Claims18
A device comprising:
- a well formed on a substrate;
- a threshold voltage control ion layer provided in at least a portion of the well;
- device isolation layers provided over at least a portion of each side of the well;
- and
- ion compensation layers provided on edges and at least a portion of bottoms of the device isolation layers contiguous with a surface of the well.
2 more elements
A method, comprising:
- ion implanting first conductive type impurities into a semiconductor substrate to form a well;
- ion implanting second conductive impurities into the well to control a threshold voltage;
- forming device isolation layers over portions of the well and the semiconductor substrate;
- and
- ion implanting third conductive impurities into the well to form ion compensation layers on edges and at least a portion of bottoms of the device isolation layers adjacent to the well.
2 more elements
A method comprising:
- forming a plurality of device isolation layers to divide a plurality of transistors on a semiconductor substrate;
- ion implanting first conductive impurities into the semiconductor substrate between the device isolation layers to form a plurality of wells corresponding to the transistors;
- ion implanting second conductive impurities into the wells;
- and
- ion implanting third conductive impurities into the wells to form ion compensation layers on edges and at least a portion of bottoms of the device isolation layers over respective wells.
2 more elements
Dependencies are inferred from the claim text.