Silicon nitride passivation layers having oxidized interface
OwnerIrina Vasilyeva, Richard Pastainventors
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Abstract
A method of forming a passivation film on a semiconductor substrate is provided and includes forming a first silicon nitride containing layer on the substrate, oxidizing the surface of the first silicon nitride containing layer, and forming a second silicon nitride containing layer on the oxidized surface of the first silicon nitride containing layer. The oxidized surface may be formed by exposing the first silicon nitride containing layer to an oxygen containing gas plasma.
Claims14
A semiconductor device comprising a substrate and a passivation film on said substrate, wherein said passivation film comprises a first silicon nitride containing layer having an oxidized surface and a second silicon nitride containing layer on said first silicon nitride containing layer and forming an oxidized interface between said first and second silicon nitride containing layers.
A semiconductor device comprising a substrate and a passivation film on said substrate, said passivation film formed by depositing a first silicon nitride containing layer on said substrate, oxidizing the surface of said first silicon nitride containing layer, and forming a second silicon nitride containing layer on the oxidized surface of said first silicon nitride containing layer.
A semiconductor device comprising a semiconductor substrate and a passivation film on said semiconductor substrate, said passivation film formed by depositing a first silicon nitride containing layer on said semiconductor substrate, oxidizing the surface of said first silicon nitride containing layer by exposing said first silicon nitride containing layer to an oxygen-containing plasma, and forming a second silicon nitride containing layer on the oxidized surface of said first silicon nitride containing layer.
A semiconductor device comprising a semiconductor substrate and a passivation film on said semiconductor substrate, said passivation film formed by providing a semiconductor substrate in a reaction chamber, forming a first silicon nitride containing layer on said semiconductor substrate, oxidizing the surface of said first silicon nitride containing layer by exposing said first silicon nitride containing layer to an oxygen-containing plasma in said reaction chamber, and forming a second silicon nitride containing layer on the oxidized surface of said first silicon nitride containing layer.
Dependencies are inferred from the claim text.