Back to results
US 2007/0164389 A1Published application
Cmos image sensor
OwnerTae Young Leeinventor
Life of this patent
Estimating the term…
Abstract
Embodiments relate to an image sensor that may use a passivation layer and a method for manufacturing the same. In embodiments, an image sensor may include a semiconductor substrate on which a photodiode and a transistor for the image sensor are formed, and a passivation layer formed over an entire surface of the semiconductor substrate. The passivation layer may include a first insulation layer made of TEOS, and a second insulation layer made of a nitride material formed on the first insulation layer.
Claims17
An image sensor comprising:
- a semiconductor substrate including a photodiode;
- and
- a passivation layer formed over the semiconductor substrate,
- wherein the passivation layer comprises a first insulation layer made of TEOS, and a second insulation layer made of a nitride material and formed over the first insulation layer.
1 more element
An image sensor comprising:
- a substrate including a plurality of photodiodes and transistors;
- a passivation layer formed over a surface of the semiconductor substrate and configured to protect the photodiodes and transistors of the substrate;
- a color filter layer formed over the passivation layer;
- and
- a plurality of microlenses formed over the color filter layer,
- wherein the passivation layer comprises
- a first insulation layer made of TEOS;
- and
- a second insulation layer made of a nitride material and formed on the first insulation layer.
6 more elements
A method, comprising:
- forming a plurality of photodiodes on a substrate;
- forming a first insulating layer of TEOS over the plurality of photodiodes;
- forming a second insulating layer of nitride material over the first insulating layer;
- and
- forming a plurality of microlenses over the second insulating layer, each of the plurality of microlenses substantially aligned with a photodiode.
2 more elements
Dependencies are inferred from the claim text.