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US 2007/0164388 A1Published application
Memory cell comprising a diode fabricated in a low resistivity, programmed state
AssigneeSanDisk 3D LLC
InventorsTanmay KUMAR, S. Brad Herner
Life of this patent
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Abstract
A memory device includes at least one diode memory cell. The diode is fabricated in a low resistivity, programmed state.
Claims21
A nonvolatile memory device comprising at least one memory cell which consists essentially of a diode and electrically conductive electrodes contacting the diode, wherein the diode is fabricated in a low resistivity, programmed state.
A nonvolatile memory device, comprising a plurality of memory cells, wherein each memory cell comprises:
- a first electrode;
- a polycrystalline silicon, germanium or silicon-germanium diode electrically contacting the first electrode;
- and
- a second electrode electrically contacting the diode,
- wherein the second electrode comprises a titanium silicide, titanium germanide or titanium silicide-germanide layer having a C49 phase which physically contacts the diode.
2 more elements
A nonvolatile memory device comprising:
- a read/write memory cell comprising a first electrode, a diode which is fabricated in a low resistivity programmed state, and a second electrode;
- and
- a means for applying a reverse bias above the diode's critical voltage value to the diode to switch the diode from the low resistivity programmed state to a high resistivity, unprogrammed state, and for applying a forward bias to the diode to switch the diode to the low resistivity, programmed state.
Dependencies are inferred from the claim text.