Semiconductor device and fabrication method thereof

A semiconductor device, comprising:

• a substrate;
• a sensor chip attached to the substrate, wherein the planar size of the sensor chip is smaller than that of the substrate, and the sensor chip has an active surface with a sensor area and a non-active surface opposite the active surface, the sensor chip being attached to the substrate through its non-active surface;
• a plurality of bonding wires for electrically connecting the sensor chip to the substrate;
• an insulating layer covering the area of the substrate not attached with the sensor chip, wherein the height of the insulating layer is not greater than the thickness of the sensor chip;
• an adhesive layer formed on the insulating layer, the height of the adhesive layer being no greater than the highest loop-height of the bonding wires;
• and
• a light transmitting cover adhered to the adhesive layer and covering the sensor chip.

A semiconductor device, comprising:

• a substrate;
• a sensor chip attached to the substrate, wherein the planar size of the sensor chip is smaller than that of the substrate, and the sensor chip has an active surface with a sensor area and a non-active surface opposite the active surface, the sensor chip being attached to the substrate through its non-active surface;
• a plurality of bonding wires for electrically connecting the sensor chip to the substrate;
• a first insulating layer covering the area of the substrate not attached with the sensor chip, wherein the height of the first insulating layer is not greater than the thickness of the sensor chip;
• a second insulating layer disposed on the first insulating layer, the height of the second insulating layer being greater than the highest loop-height of the bonding wires;
• an adhesive layer formed on the second insulating layer;
• and
• a light transmitting cover adhered to the adhesive layer and covering the sensor chip.