Semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsHiroyuki Ohta, Kenichi Okabe
Life of this patent
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Abstract
A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.
Claims12
A semiconductor device including a field-effect transistor arranged in a semiconductor substrate, the transistor comprising:
- a gate electrode;
- source/drain impurity diffusion regions;
- and
- carbon layers surrounding the source/drain impurity diffusion regions, each of the carbon layers being provided at an associated one of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in a direction away from the gate electrode and to surround in profile the associated source/drain impurity diffusion region.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode via a gate insulating film on a semiconductor substrate;
- forming source/drain extension regions in the semiconductor substrate using the gate electrode as a mask;
- forming carbon layers such that each of the carbon layers is offset from the front edge of the associated source/drain extension region in a direction away from the gate electrode;
- and
- forming source/drain impurity diffusion regions such that each of the source/drain impurity diffusion regions is offset from the channel-side boundary of the associated carbon layer so as to be away from the gate electrode and is located shallower than the depth-direction boundary of the carbon layer.
Dependencies are inferred from the claim text.