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US 2007/0164369 A1Published application
Cobalt silicidation process for substrates comprised with a silicon-germanium layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Chao Huang, Yee-Chia Yeo, Chao-Hsiung Wang, Chun-Chieh Lin, Chenming Hu
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Abstract
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.
Claims4
A semiconductor device comprising:
- a substrate;
- a gate structure formed over the semiconductor alloy layer;
- source and drain regions formed on both sides of the gate structure in the substrate;
- and
- a semiconductor alloy layer in the substrate below the gate structure but absent from the source and drain regions.
2 more elements
Dependencies are inferred from the claim text.