CMOS gates with solid-solution alloy tunable work functions
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Paul Farrar, Kie Ahn
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Abstract
Gates of at least one of NMOS transistors and PMOS transistors of a CMOS integrated circuit are formed with a solid-solution alloy of at least two metals. The work function of the gate electrode is tunable by controlling the selection of the metals or the relative proportion of the metals that form a layer of the solid-solution alloy. In one embodiment, a layer of each metal is deposited onto the gate area of a MOS transistor. At least one metal is deposited using atomic layer deposition. The solid-solution alloy is formed by annealing subsequent to the deposition of the metals.
Claims38
A CMOS device, comprising:
- first type MOS transistors each including a first type gate including a layer of a solid-solution alloy of a first metal and a second metal;
- and
- second type MOS transistors each including a second type gate including a layer of at least one of the first metal and the second metal.
A CMOS device, comprising:
- an NMOS transistor including an NMOS gate;
- and
- a PMOS transistor including a PMOS gate,
- wherein at least one of the NMOS gate and the PMOS gate includes a solid-solution alloy of a first metal and a second metal formed by depositing the first metal, depositing the second metal, and annealing.
A method for producing a CMOS device, the method comprising:
- depositing a first metal onto gate areas of first type transistors and gate areas of second type transistors;
- depositing a second metal onto the gate areas of the second type transistors after the first metal is deposited;
- and
- forming a solid-solution alloy of the first metal and the second metal in the gate area of the second type transistors by annealing after the second metal is deposited.
A method for producing a CMOS device, the method comprising:
- forming an NMOS gate for an NMOS transistor;
- and
- forming a PMOS gate for a PMOS transistor,
- wherein at least one of the forming the NMOS gate and the forming the PMOS gate includes:
- forming a first metal layer by depositing the first metal;
- forming a second metal layer on the first metal layer by depositing the second metal;
- and
- forming a layer of a solid-solution alloy by annealing.
Dependencies are inferred from the claim text.