Back to results
US 2007/0164361 A1Published application
Micro-mechanically strained semiconductor film
AssigneeMicron Technology, Inc.
InventorLeonard Forbes
Life of this patent
Estimating the term…
Abstract
A semiconductor structure embodiment comprises a semiconductor membrane with local strained areas. The membrane with local strained areas is formed by a process including performing a local oxidation of silicon (LOCOS) process in a substrate and removing resulting oxide to form a recess in the substrate, and bonding a semiconductor membrane to the substrate to induce a strain where the membrane conforms to the recess in the substrate.
Claims22
A semiconductor structure, comprising:
- a semiconductor membrane with local strained areas, formed by a process including:
- performing a local oxidation of silicon (LOCOS) process in a substrate and removing resulting oxide to form a recess in the substrate;
- and
- bonding a semiconductor membrane to the substrate to induce a strain where the membrane conforms to the recess in the substrate.
1 more element
A semiconductor structure, comprising:
- a semiconductor membrane with local strained areas, formed by a process including:
- performing a local oxidation of silicon (LOCOS) process in a substrate and removing resulting oxide to form a recess in the substrate;
- and
- bonding a semiconductor membrane to the substrate to induce a strain where the membrane conforms to the recess in the substrate,
- wherein the local strained areas of the semiconductor membrane have a strain greater than 0.5%.
2 more elements
A semiconductor structure, comprising:
- a semiconductor membrane with local strained areas, formed by a process including:
- performing a local oxidation of silicon (LOCOS) process in a substrate and removing resulting oxide to form a recess in the substrate;
- and
- bonding a semiconductor membrane to the substrate to induce a strain where the membrane conforms to the recess in the substrate,
- wherein the semiconductor membrane has a thickness less than approximately 300 Å.
2 more elements
Dependencies are inferred from the claim text.