Strained semiconductor-on-insulator (sSOI) by a simox method

A method of fabricating a strained semiconductor-on-insulator (sSOI) material comprising:

• forming a doped semiconductor layer beyond its critical thickness on a surface of a semiconductor substrate, said doped semiconductor layer having a lower lattice constant than an undoped semiconductor material;
• implanting oxygen ions into at least said doped semiconductor layer to form a structure including an oxygen ion enriched region therein;
• and
• annealing said structure to convert said oxygen ion enriched region into a buried oxide region.

A strained semiconductor-on-insulator (sSOI) material comprising:

• a semiconductor substrate;
• a graded semiconductor buffer layer located on said semiconductor substrate;
• a buried oxide layer located on said graded semiconductor buffer layer;
• and
• a tensile strained semiconductor layer located on said buried oxide layer.

A strained semiconductor-on-insulator (sSOI) material comprising:

• a semiconductor substrate;
• a doped semiconductor layer on said semiconductor substrate;
• a buried oxide layer located on said doped semiconductor layer;
• and
• a compressive strained semiconductor layer located on said buried oxide layer.