Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device including vertical double diffused MOS transistor with a trench gate structure, comprising the steps of:

• forming a trench on a semiconductor substrate;
• forming a gate electrode which is disposed within the trench and project from a surface of the semiconductor substrate;
• forming a side wall on side surface of the gate electrode;
• and
• after forming the side wall, forming metal silicide films on the surface of the semiconductor substrate and a surface of the gate electrode.

A semiconductor device including planar MOS transistor and vertical double diffused MOS transistor with a trench gate structure, comprising:

• a semiconductor substrate;
• a vertical double diffused MOS transistor gate electrode projecting from a surface of the semiconductor substrate;
• a planar MOS transistor gate electrode formed on the semiconductor substrate;
• a side wall formed on a side surface of the vertical double diffused MOS transistor gate electrode and the planar MOS transistor gate electrode;
• and
• metal silicide films formed on the surface of the semiconductor substrate and surfaces of the vertical double diffused MOS transistor gate electrode and the planar MOS transistor gate electrode.

A method for manufacturing a semiconductor device including planar MOS transistor and vertical double diffused MOS transistor with a trench gate structure, comprising the steps of:

• forming a trench on a semiconductor substrate;
• forming a vertical double diffused MOS transistor gate electrode which is disposed within the trench and project from a surface of the semiconductor substrate;
• forming a planar MOS transistor gate electrode on the semiconductor substrate;
• forming a side wall on a side surface of the vertical double diffused MOS transistor gate electrode and the planar MOS transistor gate electrode;
• and
• after forming the side wall, forming metal silicide films on the surface of the semiconductor substrate and surfaces of the vertical double diffused MOS transistor gate electrode and the planar MOS transistor gate electrode.

A semiconductor device including vertical double diffused MOS transistor with a trench gate structure, comprising:

• a semiconductor substrate;
• a trench formed on the semiconductor substrate;
• a gate insulating film which is formed along inner surfaces of the trenches and include protruding portion protruding to an outside of the trench;
• a gate electrode embedded in the trenches;
• and
• metal silicide films formed on a surface of the semiconductor substrate and a surface of the gate electrode.

A method for manufacturing a semiconductor device including vertical double diffused MOS transistor with a trench gate structure, comprising the steps of:

• forming a trench on a semiconductor substrate;
• forming a gate insulating film which include a protruding portion protruding to an outside of the trench, along an inner surface of the trench;
• forming a gate electrode embedded in the trench;
• and
• forming metal silicide films on a surface of the semiconductor substrate and a surface of the gate electrode.
• a gate insulating film which is formed along inner surfaces of the trenches and include protruding portion protruding to an outside of the trench;
• a gate electrode embedded in the trenches;
• and
• metal silicide films formed on a surface of the semiconductor substrate and a surface of the gate electrode.

A method for manufacturing a semiconductor device including vertical double diffused MOS transistor with a trench gate structure, comprising the steps of:

• forming a trench on a semiconductor substrate;
• forming a gate insulating film which include a protruding portion protruding to an outside of the trench, along an inner surface of the trench;
• forming a gate electrode embedded in the trench;
• and
• forming metal silicide films on a surface of the semiconductor substrate and a surface of the gate electrode.